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Effect of Facet on Local Electron Density of Oxygen Vacancy in Catalysts for Nitrogen Electro-Reduction
Cheng, Wenjing1,2; Liu, Yunpeng3; Yang, Xiaohui4; Yan, Shuhao1; Huang, Gaosheng1; Zhang, Hong1; Tang, Zhiyong1; Zhou, Huiqiong1
2024-04-11
摘要Oxygen-vacancy (Ov) engineering is an effective strategy to manipulate the electronic configuration of catalysts for electrochemical nitrogen reduction reaction (eNRR). The influence of the stable facet on the electronic configuration of Ov is widely studied, however, the effect of the reactive facet on the local electron density of Ov is unveiled. In this work, an eNRR electrode R(111)-TiO2/HGO is provided with a high proportion exposed reactive facet (111) of rutile-TiO2 (denoted as R(111)-TiO2) nanocrystals with Ov anchored in hierarchically porous graphite oxide (HGO) nanofilms. The R(111)-TiO2/HGO exhibits excellent eNRR performance with an NH3 yield rate of 20.68 mu g h-1 cm-2, which is approximate to 20 times the control electrode with the most stable facet (110) exposed (R(110)-TiO2/HGO). The experimental data and theoretical simulations reveal that the crystal facet (111) has a positive effect on regulating the local electron density around the oxygen vacancy and the two adjacent Ti-sites, promoting the pi-back-donation, minimizing the eNRR barrier, and transforming the rate determination step to *NNH ->*NNHH. This work illuminates the effect of crystal facet on the performance of eNRR, and offers a novel strategy to design efficient eNRR catalysts. R(111)-TiO2/HGO with Ov anchored in hierarchically porous graphite oxide (HGO) nanofilms exhibits excellent electrochemical nitrogen reduction reaction (eNRR) performance, attributed to the positive effect of the crystal facet (111) on regulating the local electron density and promoting the pi-back-donation, minimizing the eNRR barrier, and transforming the rate determination step to *NNH ->*NNHH. image
关键词electrochemical nitrogen reduction reaction (eNRR) facet control hierarchical pores oxygen vacancy self-support
DOI10.1002/smll.202312210
发表期刊SMALL
ISSN1613-6810
页码11
通讯作者Zhang, Hong(zhanghong@nanoctr.cn) ; Zhou, Huiqiong(zhouhq@nanoctr.cn)
收录类别SCI
WOS记录号WOS:001199672000001
语种英语