KMS Chongqing Institute of Green and Intelligent Technology, CAS
| The optical gain variation of Ge nanowires induced by L-valley splitting under the [110] direction stress | |
Li, Xin1,2 ; Hou, Ning1,2; Xiong, Wen1,2
| |
| 2024 | |
| 摘要 | The electronic structures of Ge nanowires under the [110] direction stress are calculated via effective-mass k center dot p theory, and the results manifest eight equivalent L-valleys will be split into fourfold degenerate L- 1-valleys and L- 2-valleys. With increasing stress, the electron levels at the L- 1-valleys and L- 2-valleys can be pushed close to and away from those at the Gamma-valley, respectively, which causes the appearance of a rising inflection point in the Gamma-valley filling ratio and gain peak intensity at around 2.5 GPa stress. Moreover, we prove the positive net peak gain with small diameters is apt to be obtained considering the free-carrier absorption loss. |
| 关键词 | optical gain Ge nanowires G-valley and L-valley [110] direction stress |
| DOI | 10.35848/1882-0786/ad1db6 |
| 发表期刊 | APPLIED PHYSICS EXPRESS
 |
| ISSN | 1882-0778 |
| 卷号 | 17期号:1页码:5 |
| 通讯作者 | Xiong, Wen(xiongwen@cigit.ac.cn) |
| 收录类别 | SCI |
| WOS记录号 | WOS:001148951400001 |
| 语种 | 英语 |
