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Temperature dependence of infrared photoresponse from lead sulfide film grown by chemical bath deposition
Shi, Zeyuan1,2; Li, Haozhou1; Yang, Dong1,2; Chen, Shi1,2; Leng, Chongqian1; Que, Longcheng3; Shen, Jun1,2
2024-03-29
摘要Due to the lower Auger recombination coefficient of lead salts, the study of room temperature infrared detectors based on lead salt is reemerges as a hot research topic. In this paper, we prepared polycrystalline lead sulfide (PbS) films using chemical bath deposition and fabricated a photovoltage infrared detector with Si. Different from normal PbS photodetectors, which usually show positive photoconductivity, our device demonstrated both positive and negative photoconductivity under 1550 nm laser illumination. The switching of positive and negative photoconductivity was found to be depended on temperature and applied bias. We proposed that the change of photoconductivity is due to the electron traps from S vacancies. Furthermore, we also tested the photoresponse under infrared blackbody radiation, which confirms that the device exhibits high sensitivity. The temperature dependence of PbS infrared photodetector demonstrated in this paper could be useful for applications involving focal array planes based on lead-related materials.
关键词lead sulfide infrared detector negative photoconductivity
DOI10.1088/1361-6463/ad18f8
发表期刊JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
卷号57期号:13页码:9
通讯作者Leng, Chongqian(cqleng@cigit.ac.cn) ; Que, Longcheng(lcque@uestc.edu.cn)
收录类别SCI
WOS记录号WOS:001137021900001
语种英语