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	Modeling of graphene photodetector based on photogating effect for circuits simulation
	Li, Haozhou1; Shi, Zeyuan2; Que, Longcheng3; Shen, Jun2
	2024
摘要	Graphene photodetectors based on the photogating effect offer the advantages of high responsivity. However, physical model of these photodetectors which is suitable for circuit design are still missing at present time. This paper aims to develop a physical model of the detector by introducing a 'virtual back-gate' method, which translates incident optical power into the Dirac point voltage of the transfer curve. Additionally, a physical model of the detector is established by combining the 'virtual back-gate' and 'photo-gate'. To investigate the relationship between input optical power and photocurrent, a detector PSPICE model is developed using the gate-controlled current sources realized through the 'virtual back-gate' and 'photo-gate'. A capacitive transimpedance amplifier circuit is employed for simulation verification. The research presented in this paper serves as a valuable reference for the circuit design of two-dimensional material photodetectors based on the photogating effect.
关键词	graphene photogating PSPICE equivalent model
DOI	10.1088/1402-4896/ad131e
发表期刊	PHYSICA SCRIPTA
ISSN	0031-8949
卷号	99期号:1页码:10
通讯作者	Que, Longcheng(lcque@uestc.edu.cn) ; Shen, Jun(shenjun@cigit.ac.cn)
收录类别	SCI
WOS记录号	WOS:001128330400001
语种	英语