中国科学院重庆绿色智能技术研究院机构知识库

QQ客服 官方微博 反馈留言

	The optical gain of dilute bismuth GaAs nanowires under the joint uniaxial stresses
	Xiong, Wen1,2; Wang, Fei3
	2023-08-15
摘要	Combining the effective-mass theory with valence-band anticrossing model, the electronic structures and optical gain of dilute bismuth (Bi) GaAs nanowires under the uniaxial stresses are studied. The calculations manifest the band gap of GaAs1-xBix nanowires will be lowered with increasing bismide composition and [100] direction uniaxial stress, which can cause the red shift of optical gain peaks of nanowires. Moreover, it is found that, although almost pure optical gain along z direction can be ob-tained via applying single [100] direction stress, the first gain peaks are hard to be tuned to the optimal optical communication band, which makes it possible to impose another small uniaxial stress along [001] direction simultaneously to further redshift the gain peaks, and the ultimate results prove that the effect under the joint uniaxial stresses is remarkable. Our investigations mean that GaAs1-xBix nanowires is suitable for optoelectronic devices in optical communication band through appropriate modulated meth-ods.& COPY; 2023 Elsevier B.V. All rights reserved.
关键词	Optical gain Dilute bismuth GaAs nanowires Effective-mass theory Uniaxial stresses
DOI	10.1016/j.physleta.2023.128941
发表期刊	PHYSICS LETTERS A
ISSN	0375-9601
卷号	479页码:7
通讯作者	Xiong, Wen(xiongwen@cigit.ac.cn)
收录类别	SCI
WOS记录号	WOS:001011639600001
语种	英语