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Polarity-Tunable Field Effect Phototransistors
Fu, Jintao1,2; Jiang, Hao1; Nie, Changbin1,2; Sun, Feiying1; Tang, Linlong1; Li, Yunjie1; Li, Zhancheng1; Xiong, Wen1; Yang, Jun1; Li, Xin1
2023-05-30
摘要Field-effect phototransistors feature gate voltage modulation,allowing dynamic performance control and significant signal amplification.A field-effect phototransistor can be designed to be inherently eitherunipolar or ambipolar in its response. However, conventionally, oncea field-effect phototransistor has been fabricated, its polarity cannotbe changed. Herein, a polarity-tunable field-effect phototransistorbased on a graphene/ultrathin Al2O3/Si structureis demonstrated. Light can modulate the gating effect of the deviceand change the transfer characteristic curve from unipolar to ambipolar.This photoswitching in turn produces a significantly improved photocurrentsignal. The introduction of an ultrathin Al2O3 interlayer also enables the phototransistor to achieve a responsivityin excess of 10(5) A/W, a 3 dB bandwidth of 100 kHz, a gain-bandwidthproduct of 9.14 x 10(10) s(-1), anda specific detectivity of 1.91 x 10(13) Jones. Thisdevice architecture enables the gain-bandwidth trade-off incurrent field-effect phototransistors to be overcome, demonstratingthe feasibility of simultaneous high-gain and fast-response photodetection.
关键词Field effect phototransistors Polarity Gain-bandwidthproduct Graphene Specific detectivity
DOI10.1021/acs.nanolett.3c00728
发表期刊NANO LETTERS
ISSN1530-6984
卷号23期号:11页码:4923-4930
通讯作者Shi, Haofei(shi@cigit.ac.cn) ; Wei, Xingzhan(weixingzhan@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:001008289200001
语种英语