KMS Chongqing Institute of Green and Intelligent Technology, CAS
| InGaO3 Nanowire Networks for Deep Ultraviolet Photodetectors | |
Li, Bei1,2,3; Wu, Yutong2,3; Li, Guowei; Feng, Wenlin1 ; Lu, Wenqiang1,2,3
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| 2023-06-06 | |
| 摘要 | Wide band gap semiconductor nanomaterials have greatresearch prospectsin power semiconductor devices, radio frequency devices, optoelectronicsensor devices, and so on. Among them, gallium oxide is consideredas the representative material of wide band gap semiconductor nanomaterialsas a deep ultraviolet (UV) photoelectric sensing device because ofits 4.9 eV band gap width. However, the traditional synthesis of thiskind of metal oxide semiconductor nanomaterials by the chemical vapordeposition (CVD) method still has some problems. The experimentalprocess is not easy to achieve due to the high temperature of 960 degrees C, and the lower photocurrent makes it difficult to read thephotoelectric signal for subsequent devices because of the opticalresponse current of the order of nanoampere. In this work, galliumantimonide and indium antimonide were selected as the nutrition reactionmaterials, while oxygen is used as the oxide materials. InGaO3 nanowire network materials were prepared at a lower temperatureof 700 degrees C and a lower working pressure of 0.2 kPa, the deep UVphotoelectric response of the optoelectronic devices was measured,and high performance was obtained at 5 V bias, like at a power of0.64 mu W/cm(2), the response is 80.1 A/W, detectionis 1.03 x 10(14), and the external quantum efficiencyis 3.9 x 10(4). Especially, the photoelectric current34.1 mu A is far larger than that of the level of several nanoamperetraditional gallium oxide devices. Its reaction principle is thatIn and Ga metal nucleate and oxidize on the substrate to form InGaO3 nanowires after antimonide decomposition at 700 degrees C temperature,which is lower than 960 degrees C of the traditional CVD reaction method.This mechanism is different from that of traditional graphite andoxide powder reduction, which can save energy. In a word, this researchhas invented a method for preparing indium doping gallium oxide nanomaterials,which provides a reference for rapid preparation of response materialsand low-energy consumption for deep UV photoelectric devices. |
| 关键词 | ultraviolet photodetector ternary metal oxides InSb GaSb chemical vapor deposition InGaO3 nanowire |
| DOI | 10.1021/acsanm.3c00900 |
| 发表期刊 | ACS APPLIED NANO MATERIALS
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| 页码 | 8 |
| 通讯作者 | Feng, Wenlin(fengwenlin@cqut.edu.cn) ; Lu, Wenqiang(wqlu@cigit.ac.cn) |
| 收录类别 | SCI |
| WOS记录号 | WOS:001010275400001 |
| 语种 | 英语 |
