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Analytic models for organic field-effect transistors based on exponential and power mobility models
Luo, Jinling1,2,3; Sun, Jiuxun4; Kang, Shuai1,2,3; Pan, Ziwei1,2,3; Fu, Xie1,2,3; Wang, Liang1,2,3; Lu, Wenqiang1,2,3
2023-06-01
摘要The fundamental I-V formula of an organic field effect transistor (OFET) is improved to overcome the divergence of the integrand, so it is very convenient for both numerical calculations and analytic derivations. The analytic I-V formulae are derived based on the exponential mobility model and power-function mobility model, respectively, and the derived analytic formulae are applied to three OFET devices. The results calculated from the reformulated analytic I-V formulae taking in exponential and power function mobility models are all in good agreement with the experimental I-V data. The parameters mu (0) and gamma that are extracted from the mobility model and fitted by experimental data show simple Arrhenius temperature dependence and inverse linear relationship with temperature, respectively. These findings are very useful for practical applications and device simulations.
关键词organic field-effect transistor analytic current-voltage formula mobility model
DOI10.1088/1572-9494/acc3f5
发表期刊COMMUNICATIONS IN THEORETICAL PHYSICS
ISSN0253-6102
卷号75期号:6页码:9
通讯作者Luo, Jinling(luojinling@cigit.ac.cn) ; Sun, Jiuxun(sjx@uestc.edu.cn)
收录类别SCI
WOS记录号WOS:000993995000001
语种英语