KMS Chongqing Institute of Green and Intelligent Technology, CAS
Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing | |
Zhao, Kangyi1; Feng, Shuanglong2; Yang, Chan2; Shen, Jun2; Fu, Yongqi1 | |
2022-03-01 | |
摘要 | High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensitivity are achieved in the PbSe-based photodetector, reaching maximum values of 7.6 x 10(9) cm.Hz(1/2)/W and 1.723 A/W, respectively. Compared with thermal annealing, plasma sensitization makes the sensitization easier and significantly improves the performance. |
关键词 | PbSe film infrared photodetector plasma processing |
DOI | 10.1088/1674-1056/ac3224 |
发表期刊 | CHINESE PHYSICS B |
ISSN | 1674-1056 |
卷号 | 31期号:3页码:6 |
通讯作者 | Feng, Shuanglong(fengshuanglong@cigit.ac.cn) ; Fu, Yongqi(yqfu@uestc.edu.cn) |
收录类别 | SCI |
WOS记录号 | WOS:000767566300001 |
语种 | 英语 |