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Self-catalyst beta-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors
Wu, Yutong1,2; Feng, Shuanglong2,3; Zhang, Miaomiao2,3; Kang, Shuai2; Zhang, Kun1,2; Tao, Zhiyong4; Fan, Yaxian4; Lu, Wenqiang2,3
2021-08-31
摘要Monoclinic gallium oxide (beta-Ga2O3) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (100-280 nm). The growth of beta-Ga2O3 is challenging and most methods require Au as the catalyst and a long reacting time (more than 1 hour). In this work, the self-catalyst beta-Ga2O3 lateral nanowire networks were synthesized on an insulating substrate rapidly by a simple low-cost Chemical Vapor Deposition (CVD) method. A thin film of beta-Ga2O3 nanowire networks was synthesized within a reacting time of 15 minutes, which possesses a huge possibility for the rapid growth of beta-Ga2O3 metal oxide nanowires networks and application in the future solar-blind photodetector. MSM (metal-semiconductor-metal) photodetectors based on the beta-Ga2O3 nanowire networks revealed fast response (on-off ratios is about 10(3)), which is attributed to the unique cross-junction barrier-dominated conductance of the nanowire networks. In addition, the self-catalyst beta-Ga2O3 nanowires grown on insulating SiO2 are achieved and could be expected to find important applications in a bottom-up way of fabricating the next generation semiconductor nanoelectronics.
DOI10.1039/d1ra04663b
发表期刊RSC ADVANCES
卷号11期号:45页码:28326-28331
通讯作者Fan, Yaxian(yxfan@guet.edu.cn) ; Lu, Wenqiang(wqlu@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:000694655300052
语种英语