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Super deformability and thermoelectricity of bulk gamma-InSe single crystals
Zhang, Bin1; Wu, Hong2; Peng, Kunling2; Shen, Xingchen2; Gong, Xiangnan1; Zheng, Sikang2; Lu, Xu2; Wang, Guoyu4; Zhou, Xiaoyuan1,2
2021-07-01
摘要Indium selenide, a III-V group semiconductor with layered structure, attracts intense attention in various photoelectric applications, due to its outstanding properties. Here, we report super deformability and thermoelectricity of gamma-InSe single crystals grown by modified Bridgeman method. The crystal structure of InSe is studied systematically by transmission electron microscopy methods combined with x-ray diffraction and Raman spectroscopy. The predominate phase of gamma-InSe with dense stacking faults and local multiphases is directly demonstrated at atomic scale. The bulk gamma-InSe crystals demonstrate surprisingly high intrinsic super deformative ability which is highly pliable with bending strains exceeding 12.5% and 264% extension by rolling. At the meantime, InSe also possesses graphite-like features which is printable, writable, and erasable. Finally, the thermoelectric properties of gamma-InSe bulk single crystals are preliminary studied and thermal conductivity can be further reduced via bending-induced defects. These findings will enrich the knowledge of structural and mechanical properties' flexibility of InSe and shed lights on the intrinsic and unique mechanical properties of InSe polytypes.
关键词gamma-InSe single crystals structure identification super deformability thermoelectric properties
DOI10.1088/1674-1056/abf133
发表期刊CHINESE PHYSICS B
ISSN1674-1056
卷号30期号:7页码:8
通讯作者Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn)
收录类别SCI
WOS记录号WOS:000669655500001
语种英语