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Constructing an n/n(+) homojunction in a monolithic perovskite film for boosting charge collection in inverted perovskite photovoltaics
Lu, Yan-Na1; Zhong, Jun-Xing1; Yu, Yinye2,3; Chen, Xi1; Yao, Chan-Ying1; Zhang, Chengxi4,5; Yang, Meifang1; Feng, Wenhuai1; Jiang, Yong6; Tan, Ying1
2021-05-17
摘要The suboptimal carrier dynamics at the perovskite/electron transport layer has largely limited the further performance enhancement of the state-of-the-art inverted p-i-n structured perovskite solar cells. Herein, we discovered that a simple surface modification of the perovskite film by a trivalent metal halide salt, InBr3, could convert the doping levels of the top surface to be more n-type, which spontaneously formed an intriguing n/n(+) homojunction between the bulk (weak n type (n) component) and the surface (more n-type (n(+)) component) in a monolithic perovskite film. This brought about synergistic advantages of the enlarged built-in electric field for facilitated charge separation, as well as optimized electronic energy level alignment and minimized electron injection barrier at the perovskite/C-60 interface, leading to both accelerated charge extraction and suppressed interfacial charge recombination. Blade-coated inverted PSCs with n/n(+) homojunctions achieved a high power conversion efficiency (PCE) of up to 22.2%, narrowing the efficiency gap with their conventional n-i-p counterparts. The InBr3 surface treatment also improved the operational stability to >1000 hours under light with 93% initial efficiency retained.
DOI10.1039/d1ee00918d
发表期刊ENERGY & ENVIRONMENTAL SCIENCE
ISSN1754-5692
页码11
通讯作者Zhou, Yecheng(zhouych29@mail.sysu.edu.cn) ; Wang, Lianzhou(wang@uq.edu.au) ; Wu, Wu-Qiang(wuwq36@mail.sysu.edu.cn)
收录类别SCI
WOS记录号WOS:000658409100001
语种英语