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Probing the Influence of the Substrate Hole Shape on the Interaction between Helium Ions and Suspended Monolayer Graphene with Raman Spectroscopy
He, Shixuan1,2; Xie, Wanyi1,3; Zhang, Yongna1; Fang, Shaoxi1,3; Zhou, Daming1; Gan, Jie1; Zhang, Zhiyou2; Du, Jinglei2; Du, Chunlei2; Wang, Deqiang1,3
2021-01-28
摘要A helium ion beam (HIB) is ideal for milling monolayer graphene in nanopore applications, but the optimizing irradiation parameter requires a comprehensive microscopic understanding of the interaction between helium ions and the suspended graphene. In this work, we investigate the influence of the substrate hole shape on the interaction between helium ions and suspended monolayer graphene on a substrate with periodic structures of different shapes. Raman spectroscopy is used to correlate the dose of HIB irradiation with engineered defects on freestanding monolayer graphene. Raman characteristics of the suspended monolayer graphene are related to the pore size and shape of the supporting substrate upon helium ion irradiation. These provide insights into the influence of the substrate hole shape on the interaction between helium ions and a freestanding graphene membrane. Our results can be used to analyze ion-membrane interactions in the other suspended monolayer two-dimensional materials for sub-nanometer precision nanopore fabrication.
DOI10.1021/acs.jpcc.0c10738
发表期刊JOURNAL OF PHYSICAL CHEMISTRY C
ISSN1932-7447
卷号125期号:3页码:2202-2211
通讯作者Du, Chunlei(mscldu@cigit.ac.cn) ; Wang, Deqiang(dqwang@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:000614317500058
语种英语