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	Enhanced thermoelectric performance in copper-deficient Cu2GeSe3
	Huang, Tianyu1,3; Yan, Yanci1,2; Peng, Kunling1,2; Tang, Xiaodan2; Guo, Lijie2; Wang, Ruifeng1,3; Lu, Xu2; Zhou, Xiaoyuan2; Wang, Guoyu1,3
	2017-11-05
摘要	Cu2GeSe3 was synthesized via a procedure without annealing step, which leads to suppressed lattice thermal conductivity via formation of more defects. However, an unexpected drop in Seebeck coefficient was also observed compared with samples with similar hole concentration, which may be related to some kind of compensation effect in Seebeck coefficient. To suppress this effect and optimize the thermoelectric performance, a series of copper- deficient samples Cu2- xGeSe3(x = 0, 0.05, 0.1, 0.2) are prepared and studied. Contrary to common knowledge, it is found that the copper deficiency decreases the hole concentration rather than increase it. An upturn in electrical conductivity curve and a bending in Seebeck coefficient curve are found in the copper- deficient samples, which may be related to bipolar effect, or to the thermal ionization of acceptors such as VCu. Finally the power factor is optimized and the peak value of zT = 0.65 is obtained at 758 K for Cu1.95GeSe(3). (C) 2017 Elsevier B. V. All rights reserved.
关键词	Cu2GeSe3 Thermoelectric properties Cu vacancies Defects CuGe
DOI	10.1016/j.jallcom.2017.06.133
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	723页码:708-713
通讯作者	Wang, GY (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China.
收录类别	SCI
WOS记录号	WOS:000407009400089
语种	英语