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Synergistic effect of CuInSe2 alloying on enhancing the thermoelectric performance of Cu2SnSe3 compounds
Fan, Yijing1,2; Wang, Guoyu3; Zhang, Bin4; Li, Zhe1,2; Wang, Guiwen4; Zhang, Xiao4; Huang, Yuling2; Chen, Kansong5; Gu, Hao-shuang1; Lu, Xu2
2020-10-28
摘要Cu2SnSe3 based compounds with a diamond-like structure are promising thermoelectric materials. However, the relatively high lattice thermal conductivity limits further improvement in their thermoelectric performance. In this work, two compounds including In2Se3 and CuInSe2 are employed to alloy with Cu2SnSe3 aiming to decrease lattice thermal conductivity and their corresponding effects are compared. It is found that alloying with CuInSe2 is more beneficial to reduce lattice thermal conductivity and maintain the power factor, as evidenced by a higher quality factor B. Subsequently, both In and Ga doping is performed to regulate the carrier concentration of (Cu2SnSe3)(0.80)(CuInSe2)(0.2). Finally, (Cu2Sn0.97Ga0.03Se3)(0.80)(CuInSe2)(0.20) displays a decent zT of similar to 0.98 at 823 K, a nearly six-fold higher value compared to that of the pristine sample. Additionally, a zT(ave) of similar to 0.35 over 300-823 K is obtained in (Cu2Sn0.97Ga0.03Se3)(0.80)(CuInSe2)(0.20), which is among the best reported p-type Cu2SnSe3 based compounds. The result proves that alloying with CuInSe2 combined with carrier concentration optimization is a valid strategy to improve the thermoelectric performance of Cu2SnSe3 based compounds.
DOI10.1039/d0ta07211g
发表期刊JOURNAL OF MATERIALS CHEMISTRY A
ISSN2050-7488
卷号8期号:40页码:21181-21188
通讯作者Gu, Hao-shuang(guhsh@hubu.edu.cn) ; Lu, Xu(luxu@cqu.edu.cn) ; Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn)
收录类别SCI
WOS记录号WOS:000581598800032
语种英语