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	Achieving Enhanced Thermoelectric Performance in (SnTe)(1-x)(Sb2Te3)(x) and (SnTe)(1-y)(Sb2Se3)(y) Synthesized via Solvothermal Reaction and Sintering
	Liu, Xiaofang1; Zhang, Bin2; Chen, Yao1; Wu, Hong3; Wang, Hengyang1; Yang, Meiling1; Wang, Guoyu4; Xu, Jingtao5; Zhou, Xiaoyuan2,3; Han, Guang1
	2020-10-07
摘要	SnTe is proposed to be an intriguing low-toxicity alternative to PbTe. Herein, we report the diminished lattice thermal conductivity (kappa(L)) and enhanced zT of SnTe by way of vacancy engineering. (SnTe)(1-x)(Sb2Te3)(x) (x = 0.03, 0.06, and 0.10) and (SnTe)(1-y)(Sb2Se3)(y) (y = 0.03 and 0.06) were synthesized by blending and sintering their solution-synthesized nano/microstructures (i.e., SnTe octahedral particles, Sb2Te3 nanoplates, and Sb2Se3 nanorods). Benefiting from the chemical reactions during sintering, single-phase SnTe-based solid solutions were formed when x or y is not higher than 0.06, into which tunable concentrations of Sn vacancies were introduced. Such vacancies significantly enhance phonon scattering, leading to the sharply reduced room temperature kappa(L) of 1.40 and 1.26 W m(-1) K-1 for x = 0.06 and y = 0.06 samples, respectively, as compared to 3.73 W m(-1) K-1 for pristine SnTe. Enabled by point defects with the highest concentration and SnSb2Te4 secondary phase, (SnTe)(0.90)(Sb2Te3)(0.10) sample obtains the lowest kappa(L) of 0.70 W m(-1) K-1 at 813 K. Ultimately, maximum zT values of 0.6 and 0.7 at 813 K are achieved in (SnTe)(0.90)(Sb2Te3)(0.10) and (SnTe)(0.9)4(Sb2Se3)(0.06), respectively. This study demonstrates the effectiveness of vacancy engineering in improving zT of SnTe-based materials.
关键词	thermoelectric SnTe solvothermal synthesis vacancy engineering thermal conductivity
DOI	10.1021/acsami.0c13651
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
卷号	12期号:40页码:44805-44814
通讯作者	Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn) ; Han, Guang(guang.han@cqu.edu.cn)
收录类别	SCI
WOS记录号	WOS:000579956100040
语种	英语