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Enhanced thermoelectric performance of ternary compound Cu(3)PSe(4)by defect engineering
Zhang, Yu-Meng1; Shen, Xing-Chen1,2,3; Yan, Yan-Ci1; Wang, Gui-Wen4; Wang, Guo-Yu2,3; Li, Jiang-Yu5; Lu, Xu1; Zhou, Xiao-Yuan1,4
2020-06-28
摘要The diamond-like compound Cu(3)PSe(4)with low lattice thermal conductivity is deemed to be a promising thermoelectric material, which can directly convert waste heat into electricity or vice versa with no moving parts and greenhouse emissions. However, its performance is limited by its low electrical conductivity. In this study, we report an effective method to enhance thermoelectric performance of Cu(3)PSe(4)by defect engineering. It is found that the carrier concentrations of Cu3-xPSe4(x= 0, 0.03, 0.06, 0.09, 0.12) compounds are increased by two orders of magnitude asx > 0.03, from 1 x 10(17)to 1 x 10(19) cm(-3). Combined with the intrinsically low lattice thermal conductivities and enhanced electrical transport performance, a maximumzTvalue of 0.62 is obtained at 727 K forx = 0.12 sample, revealing that Cu defect regulation can be an effective method for enhancing thermoelectric performance of Cu3PSe4. Graphic abstract
关键词Cu3PSe4 Thermal conductivity Defect engineering Electrical conductivity Thermoelectric performance
DOI10.1007/s12598-020-01468-4
发表期刊RARE METALS
ISSN1001-0521
页码6
通讯作者Lu, Xu(luxu@cqu.edu.cn) ; Zhou, Xiao-Yuan(xiaoyuan2013@cqu.edu.cn)
收录类别SCI
WOS记录号WOS:000543948100002
语种英语