中国科学院重庆绿色智能技术研究院机构知识库

QQ客服 官方微博 反馈留言

	Broadband InSb/Si heterojunction photodetector with graphene transparent electrode
	Li, Xiaoxia1,2; Sun, Tai2; Zhou, Kai1,2; Hong, Xin1,2; Tang, Xinyue2; Wei, Dacheng3,4; Feng, Wenlin1; Shen, Jun2; Wei, Dapeng1,2
	2020-07-31
摘要	Silicon-based Schottky heterojunction photodetectors are promising due to their compatibility with the semiconductor process. However, the applications of these devices are usually limited to wavelengths shorter than 1.1 mu m due to the low absorption of electrode materials at infrared. In this report, silicon-based compound semiconductor heterojunction photodetectors with graphene transparent electrodes are fabricated. Due to the high absorption of InSb at infrared, as well as the good transparency and excellent electrical conductivity of the graphene, the as-prepared photodetectors show a broadband photoresponse with high performance which includes a specific detectivity of 1.9 x
关键词	indium antimonide graphene transparent electrode heterojunction photodetector
DOI	10.1088/1361-6528/ab884c
发表期刊	NANOTECHNOLOGY
ISSN	0957-4484
卷号	31期号:31页码:9
通讯作者	Shen, Jun(shenjun@cigit.ac.cn)
收录类别	SCI
WOS记录号	WOS:000536056800001
语种	英语