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MXene-Enhanced Deep Ultraviolet Photovoltaic Performances of Crossed Zn2GeO4 Nanowires
Guo, Silin1,2; Kang, Shuai1,2,3; Feng, Shuanglong1,2,3; Lu, Wenqiang1,2,3
2020-02-27
摘要The Zn2GeO4 crystal is an ideal semiconductor for deep ultraviolet (DUV) detection due to its wide band gap of similar to 4.69 eV. To further improve its DUV performance, two-dimensional (2D) MXenes with high electrical conductivity, potentially tunable electronic structure, and nonlinear optical properties were applied on crossed Zn2GeO4 nanowire (NW) network materials. The results presented here show that the DUV detectors based on Zn2GeO4/MXene hybrid nanostructures exhibited excellent optoelectronic performances with a largest responsivity of 20.43 mA/W and external quantum efficiency (EQE) of 9.9% under 254 nm wavelength light illumination. The excellent optical performance is from the synergistic effect of MXene and Zn2GeO4 nanowires. The metallic property of MXene provides a fast electron transport for Zn2GeO4/MXene, which leads to a larger photocurrent and a fast photoresponse. The construction of unique semiconductive conductive networks and large interfaces of Zn2GeO4 NWs, MXene layers, and the interfaces between them also promotes photoinduced electron hole separation in the sample. Considering a large number of members in MXene, this study demonstrates a new strategy applicable for maximizing their applications in deep ultraviolet photodetectors.
DOI10.1021/acs.jpcc.0c01032
发表期刊JOURNAL OF PHYSICAL CHEMISTRY C
ISSN1932-7447
卷号124期号:8页码:4764-4771
通讯作者Kang, Shuai(kangshuai@cigit.ac.cn) ; Lu, Wenqiang(wqlu@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:000517672900046
语种英语